TY - JOUR
T1 - Temperature dependence of the response of ultra fast silicon detectors
AU - Mulargia, R.
AU - Arcidiacono, R.
AU - Bellora, A.
AU - Boscardin, M.
AU - Cartiglia, N.
AU - Cenna, F.
AU - Cirio, R.
AU - Betta, G. F.Dalla
AU - Durando, S.
AU - Fadavi, A.
AU - Ferrero, M.
AU - Galloway, Z.
AU - Gruey, B.
AU - Freeman, P.
AU - Kramberger, G.
AU - Mandic, I.
AU - Monaco, V.
AU - Obertino, M.
AU - Pancheri, L.
AU - Paternoster, G.
AU - Ravera, F.
AU - Sacchi, R.
AU - Sadrozinski, H. F.W.
AU - Seiden, A.
AU - Sola, V.
AU - Spencer, N.
AU - Staiano, A.
AU - Wilder, M.
AU - Woods, N.
AU - Zatserklyaniy, A.
N1 - Publisher Copyright:
© 2016 IOP Publishing Ltd and Sissa Medialab srl.
PY - 2016/12/7
Y1 - 2016/12/7
N2 - The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness (300 and 50 μm) and gain (between 5 and 20) have been recently designed and manufactured by CNM (Centro Nacional de Microelectrónica, Barcelona) and FBK (Fondazione Bruno Kessler, Trento). Several measurements on these devices have been performed in laboratory and in beam test and a dependence of the gain on the temperature has been observed. Some of the first measurements will be shown (leakage current, breakdown voltage, gain and time resolution on the 300 μm from FBK and gain on the 50 μm-thick sensor from CNM) and a comparison with the theoretically predicted trend will be discussed.
AB - The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness (300 and 50 μm) and gain (between 5 and 20) have been recently designed and manufactured by CNM (Centro Nacional de Microelectrónica, Barcelona) and FBK (Fondazione Bruno Kessler, Trento). Several measurements on these devices have been performed in laboratory and in beam test and a dependence of the gain on the temperature has been observed. Some of the first measurements will be shown (leakage current, breakdown voltage, gain and time resolution on the 300 μm from FBK and gain on the 50 μm-thick sensor from CNM) and a comparison with the theoretically predicted trend will be discussed.
KW - Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
KW - Particle tracking detectors
KW - Timing detectors
UR - http://www.scopus.com/inward/record.url?scp=85008187787&partnerID=8YFLogxK
U2 - 10.1088/1748-0221/11/12/C12013
DO - 10.1088/1748-0221/11/12/C12013
M3 - Article
AN - SCOPUS:85008187787
SN - 1748-0221
VL - 11
JO - Journal of Instrumentation
JF - Journal of Instrumentation
IS - 12
M1 - C12013
ER -