Radiation tolerance of single-sided silicon microstrips

A. Holmes-Siedle, M. Robbins, S. Watts, P. Allport, R. Brenner, H. G. Moser, S. Roe, J. Straver, P. Weilhammer, P. Chochula, I. Mikulec, S. Moszczynski, M. Turala, W. Dabrowski, P. Grybos, M. Idzik, D. Loukas, K. Misiakos, I. Siotis, K. ZachariadouW. Dulinski, J. Michele, M. Schaeffer, R. Turchetta, P. Booth, J. Richardson, N. Smith, K. Gill, G. Hall, R. Sachdeva, S. Sotthibandhu, D. Vitè, R. Wheadon, C. Arrighi, P. Delpierre, M. C. Habrard, J. C. Clemens, T. Mouthuy, B. S. Avset, L. Evensen, A. Hanneborg, T. A. Hansen, D. Bisello, A. Giraldo, A. Paccagnella, L. Kurchaninov, E. Spiriti, R. Apsimon, P. Giubellino, L. Ramello, W. L. Prado da Silva, M. Krammer, M. Schuster

Risultato della ricerca: Contributo su rivistaArticolo in rivistapeer review

Abstract

The RD20 collaboration is investigating the design and operation of an LHC inner tracking detector based on silicon microstrips. Measurements have been made on prototype detectors after irradiation with electrons, neutrons, photons, and protons for doses up to 5 Mrad and fluences up to 1015 particles/cm2. The annealing of effective doping changes caused by high neutron fluences, one of the major limits to detector lifetime at the LHC, is shown to be strongly inhibited by cooling below room temperature. Detailed results are presented on the critical issue of microstrip capacitance. We have also investigated bulk damage caused by high-energy protons, interstrip isolation after neutron irradiation, and MOS capacitors irradiated with electrons and photons.

Lingua originaleInglese
pagine (da-a)511-523
Numero di pagine13
RivistaNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume339
Numero di pubblicazione3
DOI
Stato di pubblicazionePubblicato - 1 feb 1994
Pubblicato esternamente

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