Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector

B. Alessandro; S. Beolé; G. Bonazzola; E. Crescio; J. De Witt; P. Giubellino; M. Idzik; A. MarzariChiesa; M. Masera; F. Prino; L. Ramello; P. Rato Mendes; L. Riccati; M. Sitta

doi:10.1016/S0168-9002(01)01672-2

Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector

B. Alessandro
, S. Beolé
, G. Bonazzola
, E. Crescio
, J. De Witt
, P. Giubellino
, M. Idzik
, A. MarzariChiesa
, M. Masera
, F. Prino
, L. Ramello
, P. Rato Mendes
, L. Riccati
, M. Sitta

Risultato della ricerca: Contributo su rivista › Articolo da conferenza › peer review

Abstract

During the data taking of the NA50 experiment, the CMOS digital pipeline chips (CDP) used for the readout of the multiplicity detector were exposed to high levels of radiation resulting in an ionizing radiation dose of more than 200 krad and displacement damage equivalent to 1 MeV neutron fluence of more than 5 × 10¹¹ eq. neutrons cm^-2. Some of these chips showed anomalies of behaviour which we attribute to radiation induced latchup phenomena. Here we present the analysis of the data taken during the 1996, 1998 and 1999 ion runs together with the results of measurements performed in the laboratory.

Lingua originale	Inglese
pagine (da-a)	758-764
Numero di pagine	7
Rivista	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	476
Numero di pubblicazione	3
DOI	https://doi.org/10.1016/S0168-9002(01)01672-2
Stato di pubblicazione	Pubblicato - 11 gen 2002
Evento	Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K) - Firenze, Italy Durata: 28 giu 2000 → 30 giu 2000

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10.1016/S0168-9002(01)01672-2

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Alessandro, B., Beolé, S., Bonazzola, G., Crescio, E., De Witt, J., Giubellino, P., Idzik, M., MarzariChiesa, A., Masera, M., Prino, F., Ramello, L., Mendes, P. R., Riccati, L., & Sitta, M. (2002). Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 476(3), 758-764. https://doi.org/10.1016/S0168-9002(01)01672-2

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title = "Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector",

abstract = "During the data taking of the NA50 experiment, the CMOS digital pipeline chips (CDP) used for the readout of the multiplicity detector were exposed to high levels of radiation resulting in an ionizing radiation dose of more than 200 krad and displacement damage equivalent to 1 MeV neutron fluence of more than 5 × 1011 eq. neutrons cm-2. Some of these chips showed anomalies of behaviour which we attribute to radiation induced latchup phenomena. Here we present the analysis of the data taken during the 1996, 1998 and 1999 ion runs together with the results of measurements performed in the laboratory.",

keywords = "Latchup, Microelectronics, Nuclear electronics, Radiation effects, Radiation tolerant electronics",

author = "B. Alessandro and S. Beol{\'e} and G. Bonazzola and E. Crescio and \{De Witt\}, J. and P. Giubellino and M. Idzik and A. MarzariChiesa and M. Masera and F. Prino and L. Ramello and Mendes, \{P. Rato\} and L. Riccati and M. Sitta",

year = "2002",

month = jan,

day = "11",

doi = "10.1016/S0168-9002(01)01672-2",

language = "English",

volume = "476",

pages = "758--764",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier BV",

number = "3",

note = "Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K) ; Conference date: 28-06-2000 Through 30-06-2000",

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Alessandro, B, Beolé, S, Bonazzola, G, Crescio, E, De Witt, J, Giubellino, P, Idzik, M, MarzariChiesa, A, Masera, M, Prino, F, Ramello, L, Mendes, PR, Riccati, L & Sitta, M 2002, 'Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 476, n. 3, pagg. 758-764. https://doi.org/10.1016/S0168-9002(01)01672-2

Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector. / Alessandro, B.; Beolé, S.; Bonazzola, G. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 476, N. 3, 11.01.2002, pag. 758-764.

Risultato della ricerca: Contributo su rivista › Articolo da conferenza › peer review

TY - JOUR

T1 - Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector

AU - Alessandro, B.

AU - Beolé, S.

AU - Bonazzola, G.

AU - Crescio, E.

AU - De Witt, J.

AU - Giubellino, P.

AU - Idzik, M.

AU - MarzariChiesa, A.

AU - Masera, M.

AU - Prino, F.

AU - Ramello, L.

AU - Mendes, P. Rato

AU - Riccati, L.

AU - Sitta, M.

PY - 2002/1/11

Y1 - 2002/1/11

N2 - During the data taking of the NA50 experiment, the CMOS digital pipeline chips (CDP) used for the readout of the multiplicity detector were exposed to high levels of radiation resulting in an ionizing radiation dose of more than 200 krad and displacement damage equivalent to 1 MeV neutron fluence of more than 5 × 1011 eq. neutrons cm-2. Some of these chips showed anomalies of behaviour which we attribute to radiation induced latchup phenomena. Here we present the analysis of the data taken during the 1996, 1998 and 1999 ion runs together with the results of measurements performed in the laboratory.

AB - During the data taking of the NA50 experiment, the CMOS digital pipeline chips (CDP) used for the readout of the multiplicity detector were exposed to high levels of radiation resulting in an ionizing radiation dose of more than 200 krad and displacement damage equivalent to 1 MeV neutron fluence of more than 5 × 1011 eq. neutrons cm-2. Some of these chips showed anomalies of behaviour which we attribute to radiation induced latchup phenomena. Here we present the analysis of the data taken during the 1996, 1998 and 1999 ion runs together with the results of measurements performed in the laboratory.

KW - Latchup

KW - Microelectronics

KW - Nuclear electronics

KW - Radiation effects

KW - Radiation tolerant electronics

UR - https://www.scopus.com/pages/publications/0037059372

U2 - 10.1016/S0168-9002(01)01672-2

DO - 10.1016/S0168-9002(01)01672-2

M3 - Conference article

SN - 0168-9002

VL - 476

SP - 758

EP - 764

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 3

T2 - Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K)

Y2 - 28 June 2000 through 30 June 2000

ER -

Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector

Abstract

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