Abstract
The main results of a recent theory on the electrical conduction and current noise in discontinuous metal films are discussed. In this theory the main conduction mechanism is a direct-tunneling process of the electrons between metal islands within the insulator substrate. The tunneling electrons must overcome a potential barrier which is temperature dependent. The model assumes that the electrons trapped in surface states can tunnel in the metal states giving rise to a double charge layer at the interface. The current noise is generated by a modulation mechanism of the carrier direct tunneling due to thermal fluctuation of the potential barrier height, generated by a corresponding fluctuation of the surface charge. New results about the conductivity and current noise behavior on Au film deposited on sapphire tube are also given up to a temperature of about 950 K, and interpreted on the basis of the above theory.
Lingua originale | Inglese |
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pagine (da-a) | 105-112 |
Numero di pagine | 8 |
Rivista | Organic Geochemistry |
Stato di pubblicazione | Pubblicato - 1979 |
Pubblicato esternamente | Sì |
Evento | Proc - Eur Hybrid Microelectron Conf - Durata: 21 mag 1979 → 23 mag 1979 |