MOS power transistor and ceramic thyratron for fast high voltage pulser

A. Beninati, L. Busso, D. Panzieri, F. Tosello

Risultato della ricerca: Contributo su rivistaArticolo in rivistapeer review

Abstract

A high reliability circuit has been developed in order to trigger a ceramic thyratron. The necessity of building a system highly protected from voltage and current glitches is due to the particular loads with are to be driven by the thyratron. In the circuit design, VMOS (both with 'p' or 'n' channel) and HEXFET transistors have been used. A delay time of about 60 ns between the NIM input signal and the thyratron grid voltage peak has been obtained. The delay between the NIM input signal and the thyratron trigger is about 80 ns. This apparatus has been developed in order to drive a high voltage generator, used with a self-shunted streamer chamber.

Lingua originaleInglese
pagine (da-a)524-527
Numero di pagine4
RivistaNuclear Instruments and Methods In Physics Research
Volume222
Numero di pubblicazione3
DOI
Stato di pubblicazionePubblicato - 1 mag 1984
Pubblicato esternamente

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