First FBK production of 50 μm ultra-fast silicon detectors

V. Sola; R. Arcidiacono; M. Boscardin; N. Cartiglia; G. F. Dalla Betta; F. Ficorella; M. Ferrero; M. Mandurrino; L. Pancheri; G. Paternoster; A. Staiano

doi:10.1016/j.nima.2018.07.060

First FBK production of 50 μm ultra-fast silicon detectors

V. Sola
, R. Arcidiacono
, M. Boscardin
, N. Cartiglia
, G. F. Dalla Betta
, F. Ficorella
, M. Ferrero
, M. Mandurrino
, L. Pancheri
, G. Paternoster
, A. Staiano

Dipartimento di Scienze del Farmaco

Risultato della ricerca: Contributo su rivista › Articolo in rivista › peer review

Abstract

Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 μm thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of ϕ∼ 10¹⁵ n_eq/cm². In this paper, we present the characterisation, the timing performance, and the results on radiation damage tolerance of this new FBK production.

Lingua originale	Inglese
pagine (da-a)	360-368
Numero di pagine	9
Rivista	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	924
DOI	https://doi.org/10.1016/j.nima.2018.07.060
Stato di pubblicazione	Pubblicato - 21 apr 2019

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10.1016/j.nima.2018.07.060

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Sola, V., Arcidiacono, R., Boscardin, M., Cartiglia, N., Dalla Betta, G. F., Ficorella, F., Ferrero, M., Mandurrino, M., Pancheri, L., Paternoster, G., & Staiano, A. (2019). First FBK production of 50 μm ultra-fast silicon detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 924, 360-368. https://doi.org/10.1016/j.nima.2018.07.060

@article{90a3eb7d5c144e8e94633bb8fc2f67ce,

title = "First FBK production of 50 μm ultra-fast silicon detectors",

abstract = "Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 μm thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of ϕ∼ 1015 neq/cm2. In this paper, we present the characterisation, the timing performance, and the results on radiation damage tolerance of this new FBK production.",

keywords = "Charge multiplication, Fast detector, LGAD, Low gain, Silicon",

author = "V. Sola and R. Arcidiacono and M. Boscardin and N. Cartiglia and \{Dalla Betta\}, \{G. F.\} and F. Ficorella and M. Ferrero and M. Mandurrino and L. Pancheri and G. Paternoster and A. Staiano",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2019",

month = apr,

day = "21",

doi = "10.1016/j.nima.2018.07.060",

language = "English",

volume = "924",

pages = "360--368",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier BV",

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Sola, V, Arcidiacono, R, Boscardin, M, Cartiglia, N, Dalla Betta, GF, Ficorella, F, Ferrero, M, Mandurrino, M, Pancheri, L, Paternoster, G & Staiano, A 2019, 'First FBK production of 50 μm ultra-fast silicon detectors', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 924, pagg. 360-368. https://doi.org/10.1016/j.nima.2018.07.060

TY - JOUR

T1 - First FBK production of 50 μm ultra-fast silicon detectors

AU - Sola, V.

AU - Arcidiacono, R.

AU - Boscardin, M.

AU - Cartiglia, N.

AU - Dalla Betta, G. F.

AU - Ficorella, F.

AU - Ferrero, M.

AU - Mandurrino, M.

AU - Pancheri, L.

AU - Paternoster, G.

AU - Staiano, A.

PY - 2019/4/21

Y1 - 2019/4/21

N2 - Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 μm thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of ϕ∼ 1015 neq/cm2. In this paper, we present the characterisation, the timing performance, and the results on radiation damage tolerance of this new FBK production.

AB - Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 μm thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of ϕ∼ 1015 neq/cm2. In this paper, we present the characterisation, the timing performance, and the results on radiation damage tolerance of this new FBK production.

KW - Charge multiplication

KW - Fast detector

KW - LGAD

KW - Low gain

KW - Silicon

UR - https://www.scopus.com/pages/publications/85050930055

U2 - 10.1016/j.nima.2018.07.060

DO - 10.1016/j.nima.2018.07.060

M3 - Article

SN - 0168-9002

VL - 924

SP - 360

EP - 368

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

First FBK production of 50 μm ultra-fast silicon detectors

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