Doping of silicon by phosphorus end-terminated polymers: Drive-in and activation of dopants

Michele Perego, Francesco Caruso, Gabriele Seguini, Elisa Arduca, Roberto Mantovan, Katia Sparnacci, Michele Laus

Risultato della ricerca: Contributo su rivistaArticolo in rivistapeer review

Abstract

An effective doping technology for the precise control of P atom injection and activation into a semiconductor substrate is presented. Polystyrene polymers with a narrow molecular weight distribution and end-terminated with a P containing moiety are used to build up a phosphorus δ-layer to be used as the dopant source. P atoms are efficiently injected into the Si substrate by high temperature (900-1250 °C) thermal treatments. Temperature dependent (100-300 K) resistivity and Hall measurements in the van der Pauw configuration demonstrate high activation rates (ηa > 80%) of injected P atoms. This bottom-up approach holds promise for the development of a mild technology for efficient doping of semiconductors.

Lingua originaleInglese
pagine (da-a)10229-10237
Numero di pagine9
RivistaJournal of Materials Chemistry C
Volume8
Numero di pubblicazione30
DOI
Stato di pubblicazionePubblicato - 14 ago 2020

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