Abstract
An effective doping technology for the precise control of P atom injection and activation into a semiconductor substrate is presented. Polystyrene polymers with a narrow molecular weight distribution and end-terminated with a P containing moiety are used to build up a phosphorus δ-layer to be used as the dopant source. P atoms are efficiently injected into the Si substrate by high temperature (900-1250 °C) thermal treatments. Temperature dependent (100-300 K) resistivity and Hall measurements in the van der Pauw configuration demonstrate high activation rates (ηa > 80%) of injected P atoms. This bottom-up approach holds promise for the development of a mild technology for efficient doping of semiconductors.
Lingua originale | Inglese |
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pagine (da-a) | 10229-10237 |
Numero di pagine | 9 |
Rivista | Journal of Materials Chemistry C |
Volume | 8 |
Numero di pubblicazione | 30 |
DOI | |
Stato di pubblicazione | Pubblicato - 14 ago 2020 |