Developments in the FBK Production of Ultra -Fast Silicon Detectors

M. Ferrero, O. H. Ali, R. Arcidiacono, M. Boscardin, N. Cartiglia, F. Cenna, R. Cirio, M. Costa, Dalla G.F. Betta, F. Ficorella, S. Giordanengo, M. Mandurrino, V. Monaco, M. M. Obertino, L. Pancheri, G. Paternoster, R. Sacchi, F. Siviero, V. Sola, A. StaianA. Vignati

Risultato della ricerca: Capitolo in libro/report/atti di convegnoContributo a conferenzapeer review

Abstract

In this contribution we present new developments in the production of Ultra Fast Silicon Detectors (UFSD) at Fondazione Bruno Kessler (FBK) in Trento, Italy. FBK after having in 2016 a successfully first production of UFSD sensors 300-micrometer thick, has produced in 2017 its first 50- micrometer thick UFSD sensors. These sensors use high resistivity Silicon on Silicon substrate and have different doping profile configurations of the gain layer based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. The motivation of variety of gain layers it is to identify the most radiation hard technology to be employed in the production of UFSD for applications in high-radiation environments.

Lingua originaleInglese
Titolo della pubblicazione ospite2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2017 - Conference Proceedings
EditoreInstitute of Electrical and Electronics Engineers Inc.
ISBN (elettronico)9781538622827
DOI
Stato di pubblicazionePubblicato - 12 nov 2018
Evento2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2017 - Atlanta, United States
Durata: 21 ott 201728 ott 2017

Serie di pubblicazioni

Nome2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2017 - Conference Proceedings

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???event.eventtypes.event.conference???2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2017
Paese/TerritorioUnited States
CittàAtlanta
Periodo21/10/1728/10/17

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