Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

N. Cartiglia, A. Staiano, V. Sola, Roberta ARCIDIACONO, R. Cirio, F. Cenna, M. Ferrero, V. Monaco, R. Mulargia, M. Obertino, F. Ravera, R. Sacchi, A. Bellora, S Durando, M. Mandurrino, N. Minafra, V. Fadeyev, P. Freeman, Z. Galloway, E. GkougkousisH. Grabas, B. Gruey, C. A. Labitan, R. Losakul, Z. Luce, F. McKinney Martinez, H. F. W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder, N. Woods, A. Zatserklyaniy, G. Pellegrini, S. Hidalgo, M. Carulla, D Flores, A. Merlos, D. Quirion, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik

Risultato della ricerca: Contributo su rivistaArticolo in rivistapeer review

Abstract

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 µm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.
Lingua originaleInglese
pagine (da-a)83-88
Numero di pagine6
RivistaNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume850
DOI
Stato di pubblicazionePubblicato - 2017

Keywords

  • Charge multiplication
  • Fast silicon sensors
  • Instrumentation
  • Nuclear and High Energy Physics
  • Pixel detectors
  • Silicon strip
  • Thin tracking sensors

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