TY - JOUR
T1 - Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
AU - Cartiglia, N.
AU - Staiano, A.
AU - Sola, V.
AU - ARCIDIACONO, Roberta
AU - Cirio, R.
AU - Cenna, F.
AU - Ferrero, M.
AU - Monaco, V.
AU - Mulargia, R.
AU - Obertino, M.
AU - Ravera, F.
AU - Sacchi, R.
AU - Bellora, A.
AU - Durando, S
AU - Mandurrino, M.
AU - Minafra, N.
AU - Fadeyev, V.
AU - Freeman, P.
AU - Galloway, Z.
AU - Gkougkousis, E.
AU - Grabas, H.
AU - Gruey, B.
AU - Labitan, C. A.
AU - Losakul, R.
AU - Luce, Z.
AU - McKinney Martinez, F.
AU - Sadrozinski, H. F. W.
AU - Seiden, A.
AU - Spencer, E.
AU - Wilder, M.
AU - Woods, N.
AU - Zatserklyaniy, A.
AU - Pellegrini, G.
AU - Hidalgo, S.
AU - Carulla, M.
AU - Flores, D
AU - Merlos, A.
AU - Quirion, D.
AU - Cindro, V.
AU - Kramberger, G.
AU - Mandić, I.
AU - Mikuž, M.
AU - Zavrtanik, M.
N1 - Publisher Copyright:
© 2017 The Authors
PY - 2017
Y1 - 2017
N2 - In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 µm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.
AB - In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 µm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.
KW - Charge multiplication
KW - Fast silicon sensors
KW - Instrumentation
KW - Nuclear and High Energy Physics
KW - Pixel detectors
KW - Silicon strip
KW - Thin tracking sensors
KW - Charge multiplication
KW - Fast silicon sensors
KW - Instrumentation
KW - Nuclear and High Energy Physics
KW - Pixel detectors
KW - Silicon strip
KW - Thin tracking sensors
UR - https://iris.uniupo.it/handle/11579/86815
U2 - 10.1016/j.nima.2017.01.021
DO - 10.1016/j.nima.2017.01.021
M3 - Article
SN - 0168-9002
VL - 850
SP - 83
EP - 88
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
ER -