The first batch of compensated LGAD sensors

V. Sola; G. Paternoster; A. Morozzi; R. Arcidiacono; M. Barozzi; G. Borghi; M. Boscardin; N. Cartiglia; M. Centis Vignali; M. Costa; T. Croci; M. Ferrero; A. Fondacci; F. Ficorella; S. Giordanengo; O. Hammad Ali; C. Hanna; L. Lanteri; L. Menzio; F. Moscatelli; D. Passeri; N. Pastrone; F. Siviero; R. S. White

doi:10.1016/j.nima.2024.169453

The first batch of compensated LGAD sensors

V. Sola
, G. Paternoster
, A. Morozzi
, R. Arcidiacono
, M. Barozzi
, G. Borghi
, M. Boscardin
, N. Cartiglia
, M. Centis Vignali
, M. Costa
, T. Croci
, M. Ferrero
, A. Fondacci
, F. Ficorella
, S. Giordanengo
, O. Hammad Ali
, C. Hanna
, L. Lanteri
, L. Menzio
, F. Moscatelli

D. Passeri, N. Pastrone, F. Siviero, R. S. White

Department of Pharmaceutical Sciences

Research output: Contribution to journal › Review article › peer-review

Abstract

A new development of radiation-resistant silicon sensors is presented. The new sensors exploit the Low-Gain Avalanche Diode (LGAD) technology, with internal multiplication of the charge carriers, in combination with thin substrates, intrinsically less affected by radiation. An innovative design of the gain implant typical of the LGADs has been developed and fabricated, employing the compensation of acceptor and donor dopants to reproduce the effective acceptor doping dose of standard LGAD sensors. At the end of 2022, the Fondazione Bruno Kessler (Italy) delivered the first batch of compensated LGAD sensors on 30μm thick p-type epitaxial substrates. Electrical and transient characterisation of the sensors has been performed before and after irradiation up to 5 ⋅10¹⁵ 1 MeV equivalent n/cm². The ultimate goal is to develop and produce compensated LGAD sensors that can efficiently operate above fluences of 10¹⁷ 1 MeV equivalent n/cm².

Original language	English
Article number	169453
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	1064
DOIs	https://doi.org/10.1016/j.nima.2024.169453
Publication status	Published - Jul 2024

Keywords

Compensated LGAD
Radiation hardness
Silicon sensors

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10.1016/j.nima.2024.169453

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Sola, V., Paternoster, G., Morozzi, A., Arcidiacono, R., Barozzi, M., Borghi, G., Boscardin, M., Cartiglia, N., Centis Vignali, M., Costa, M., Croci, T., Ferrero, M., Fondacci, A., Ficorella, F., Giordanengo, S., Hammad Ali, O., Hanna, C., Lanteri, L., Menzio, L., ... White, R. S. (2024). The first batch of compensated LGAD sensors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1064, Article 169453. https://doi.org/10.1016/j.nima.2024.169453

@article{483039d6415a437a972eab7448a1ec51,

title = "The first batch of compensated LGAD sensors",

abstract = "A new development of radiation-resistant silicon sensors is presented. The new sensors exploit the Low-Gain Avalanche Diode (LGAD) technology, with internal multiplication of the charge carriers, in combination with thin substrates, intrinsically less affected by radiation. An innovative design of the gain implant typical of the LGADs has been developed and fabricated, employing the compensation of acceptor and donor dopants to reproduce the effective acceptor doping dose of standard LGAD sensors. At the end of 2022, the Fondazione Bruno Kessler (Italy) delivered the first batch of compensated LGAD sensors on 30μm thick p-type epitaxial substrates. Electrical and transient characterisation of the sensors has been performed before and after irradiation up to 5 ⋅1015 1 MeV equivalent n/cm2. The ultimate goal is to develop and produce compensated LGAD sensors that can efficiently operate above fluences of 1017 1 MeV equivalent n/cm2.",

keywords = "Compensated LGAD, Radiation hardness, Silicon sensors",

author = "V. Sola and G. Paternoster and A. Morozzi and R. Arcidiacono and M. Barozzi and G. Borghi and M. Boscardin and N. Cartiglia and \{Centis Vignali\}, M. and M. Costa and T. Croci and M. Ferrero and A. Fondacci and F. Ficorella and S. Giordanengo and \{Hammad Ali\}, O. and C. Hanna and L. Lanteri and L. Menzio and F. Moscatelli and D. Passeri and N. Pastrone and F. Siviero and White, \{R. S.\}",

note = "Publisher Copyright: {\textcopyright} 2024 The Authors",

year = "2024",

month = jul,

doi = "10.1016/j.nima.2024.169453",

language = "English",

volume = "1064",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier BV",

}

Sola, V, Paternoster, G, Morozzi, A, Arcidiacono, R, Barozzi, M, Borghi, G, Boscardin, M, Cartiglia, N, Centis Vignali, M, Costa, M, Croci, T, Ferrero, M, Fondacci, A, Ficorella, F, Giordanengo, S, Hammad Ali, O, Hanna, C, Lanteri, L, Menzio, L, Moscatelli, F, Passeri, D, Pastrone, N, Siviero, F & White, RS 2024, 'The first batch of compensated LGAD sensors', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 1064, 169453. https://doi.org/10.1016/j.nima.2024.169453

TY - JOUR

T1 - The first batch of compensated LGAD sensors

AU - Sola, V.

AU - Paternoster, G.

AU - Morozzi, A.

AU - Arcidiacono, R.

AU - Barozzi, M.

AU - Borghi, G.

AU - Boscardin, M.

AU - Cartiglia, N.

AU - Centis Vignali, M.

AU - Costa, M.

AU - Croci, T.

AU - Ferrero, M.

AU - Fondacci, A.

AU - Ficorella, F.

AU - Giordanengo, S.

AU - Hammad Ali, O.

AU - Hanna, C.

AU - Lanteri, L.

AU - Menzio, L.

AU - Moscatelli, F.

AU - Passeri, D.

AU - Pastrone, N.

AU - Siviero, F.

AU - White, R. S.

PY - 2024/7

Y1 - 2024/7

N2 - A new development of radiation-resistant silicon sensors is presented. The new sensors exploit the Low-Gain Avalanche Diode (LGAD) technology, with internal multiplication of the charge carriers, in combination with thin substrates, intrinsically less affected by radiation. An innovative design of the gain implant typical of the LGADs has been developed and fabricated, employing the compensation of acceptor and donor dopants to reproduce the effective acceptor doping dose of standard LGAD sensors. At the end of 2022, the Fondazione Bruno Kessler (Italy) delivered the first batch of compensated LGAD sensors on 30μm thick p-type epitaxial substrates. Electrical and transient characterisation of the sensors has been performed before and after irradiation up to 5 ⋅1015 1 MeV equivalent n/cm2. The ultimate goal is to develop and produce compensated LGAD sensors that can efficiently operate above fluences of 1017 1 MeV equivalent n/cm2.

AB - A new development of radiation-resistant silicon sensors is presented. The new sensors exploit the Low-Gain Avalanche Diode (LGAD) technology, with internal multiplication of the charge carriers, in combination with thin substrates, intrinsically less affected by radiation. An innovative design of the gain implant typical of the LGADs has been developed and fabricated, employing the compensation of acceptor and donor dopants to reproduce the effective acceptor doping dose of standard LGAD sensors. At the end of 2022, the Fondazione Bruno Kessler (Italy) delivered the first batch of compensated LGAD sensors on 30μm thick p-type epitaxial substrates. Electrical and transient characterisation of the sensors has been performed before and after irradiation up to 5 ⋅1015 1 MeV equivalent n/cm2. The ultimate goal is to develop and produce compensated LGAD sensors that can efficiently operate above fluences of 1017 1 MeV equivalent n/cm2.

KW - Compensated LGAD

KW - Radiation hardness

KW - Silicon sensors

UR - https://www.scopus.com/pages/publications/85194224631

U2 - 10.1016/j.nima.2024.169453

DO - 10.1016/j.nima.2024.169453

M3 - Review article

SN - 0168-9002

VL - 1064

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

M1 - 169453

ER -

The first batch of compensated LGAD sensors

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Keywords

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