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Test of Ultra Fast Silicon Detectors for picosecond time measurements with a new multipurpose read-out board

  • N. Minafra
  • , H. Al Ghoul
  • , R. Arcidiacono
  • , N. Cartiglia
  • , L. Forthomme
  • , R. Mulargia
  • , M. Obertino
  • , C. Royon

Research output: Contribution to journalArticlepeer-review

Abstract

Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timing measurements employing a thin multiplication layer to increase the output signal. A multipurpose read-out board hosting a low-cost, low-power fast amplifier was designed at the University of Kansas and tested at the European Organization for Nuclear Research (CERN) using a 180 GeV pion beam. The amplifier has been designed to read out a wide range of detectors and it was optimized in this test for the UFSD output signal. In this paper we report the results of the experimental tests using 50 µm thick UFSD with a sensitive area of 1.4mm2. A timing precision below 30 ps was achieved.

Original languageEnglish
Pages (from-to)88-92
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume867
DOIs
Publication statusPublished - 21 Sept 2017

Keywords

  • Charge Sensitive Amplifier
  • Picosecond Time Measurement
  • Time precision
  • Time-of-flight
  • Ultra Fast Silicon Detectors

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