Temperature dependence of the response of ultra fast silicon detectors

R. Mulargia, R. Arcidiacono, A. Bellora, M. Boscardin, N. Cartiglia, F. Cenna, R. Cirio, G. F.Dalla Betta, S. Durando, A. Fadavi, M. Ferrero, Z. Galloway, B. Gruey, P. Freeman, G. Kramberger, I. Mandic, V. Monaco, M. Obertino, L. Pancheri, G. PaternosterF. Ravera, R. Sacchi, H. F.W. Sadrozinski, A. Seiden, V. Sola, N. Spencer, A. Staiano, M. Wilder, N. Woods, A. Zatserklyaniy

Research output: Contribution to journalArticlepeer-review

Abstract

The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness (300 and 50 μm) and gain (between 5 and 20) have been recently designed and manufactured by CNM (Centro Nacional de Microelectrónica, Barcelona) and FBK (Fondazione Bruno Kessler, Trento). Several measurements on these devices have been performed in laboratory and in beam test and a dependence of the gain on the temperature has been observed. Some of the first measurements will be shown (leakage current, breakdown voltage, gain and time resolution on the 300 μm from FBK and gain on the 50 μm-thick sensor from CNM) and a comparison with the theoretically predicted trend will be discussed.

Original languageEnglish
Article numberC12013
JournalJournal of Instrumentation
Volume11
Issue number12
DOIs
Publication statusPublished - 7 Dec 2016

Keywords

  • Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
  • Particle tracking detectors
  • Timing detectors

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