Radiation resistant LGAD design

M. Ferrero; R. Arcidiacono; M. Barozzi; M. Boscardin; N. Cartiglia; G. F.Dalla Betta; Z. Galloway; M. Mandurrino; S. Mazza; G. Paternoster; F. Ficorella; L. Pancheri; H. F.W. Sadrozinski; F. Siviero; V. Sola; A. Staiano; A. Seiden; M. Tornago; Y. Zhao

doi:10.1016/j.nima.2018.11.121

Radiation resistant LGAD design

M. Ferrero
, R. Arcidiacono
, M. Barozzi
, M. Boscardin
, N. Cartiglia
, G. F.Dalla Betta
, Z. Galloway
, M. Mandurrino
, S. Mazza
, G. Paternoster
, F. Ficorella
, L. Pancheri
, H. F.W. Sadrozinski
, F. Siviero
, V. Sola
, A. Staiano
, A. Seiden
, M. Tornago
, Y. Zhao

Department of Pharmaceutical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD) manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer. LGADs with a gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced at FBK. These sensors have been exposed to neutron fluences up to ϕ_n∼3⋅10¹⁶n∕cm² and to proton fluences up to ϕ_p∼9⋅10¹⁵p∕cm² to test their radiation resistance. The experimental results show that Gallium-doped LGAD are more heavily affected by the initial acceptor removal mechanism than those doped with Boron, while the addition of Carbon reduces this effect both for Gallium and Boron doping. The Boron low-diffusion gain layer shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant density.

Original language	English
Pages (from-to)	16-26
Number of pages	11
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	919
DOIs	https://doi.org/10.1016/j.nima.2018.11.121
Publication status	Published - 1 Mar 2019

Keywords

Acceptor removal
LGAD
Silicon
Timing

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10.1016/j.nima.2018.11.121

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Ferrero, M., Arcidiacono, R., Barozzi, M., Boscardin, M., Cartiglia, N., Betta, G. F. D., Galloway, Z., Mandurrino, M., Mazza, S., Paternoster, G., Ficorella, F., Pancheri, L., Sadrozinski, H. F. W., Siviero, F., Sola, V., Staiano, A., Seiden, A., Tornago, M., & Zhao, Y. (2019). Radiation resistant LGAD design. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 919, 16-26. https://doi.org/10.1016/j.nima.2018.11.121

@article{a36fd5e68db74d0991726131bae08f7e,

title = "Radiation resistant LGAD design",

abstract = "In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD) manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer. LGADs with a gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced at FBK. These sensors have been exposed to neutron fluences up to ϕn∼3⋅1016n∕cm2 and to proton fluences up to ϕp∼9⋅1015p∕cm2 to test their radiation resistance. The experimental results show that Gallium-doped LGAD are more heavily affected by the initial acceptor removal mechanism than those doped with Boron, while the addition of Carbon reduces this effect both for Gallium and Boron doping. The Boron low-diffusion gain layer shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant density.",

keywords = "Acceptor removal, LGAD, Silicon, Timing",

author = "M. Ferrero and R. Arcidiacono and M. Barozzi and M. Boscardin and N. Cartiglia and Betta, \{G. F.Dalla\} and Z. Galloway and M. Mandurrino and S. Mazza and G. Paternoster and F. Ficorella and L. Pancheri and Sadrozinski, \{H. F.W.\} and F. Siviero and V. Sola and A. Staiano and A. Seiden and M. Tornago and Y. Zhao",

note = "Publisher Copyright: {\textcopyright} 2018 The Authors",

year = "2019",

month = mar,

day = "1",

doi = "10.1016/j.nima.2018.11.121",

language = "English",

volume = "919",

pages = "16--26",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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Ferrero, M, Arcidiacono, R, Barozzi, M, Boscardin, M, Cartiglia, N, Betta, GFD, Galloway, Z, Mandurrino, M, Mazza, S, Paternoster, G, Ficorella, F, Pancheri, L, Sadrozinski, HFW, Siviero, F, Sola, V, Staiano, A, Seiden, A, Tornago, M & Zhao, Y 2019, 'Radiation resistant LGAD design', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 919, pp. 16-26. https://doi.org/10.1016/j.nima.2018.11.121

TY - JOUR

T1 - Radiation resistant LGAD design

AU - Ferrero, M.

AU - Arcidiacono, R.

AU - Barozzi, M.

AU - Boscardin, M.

AU - Cartiglia, N.

AU - Betta, G. F.Dalla

AU - Galloway, Z.

AU - Mandurrino, M.

AU - Mazza, S.

AU - Paternoster, G.

AU - Ficorella, F.

AU - Pancheri, L.

AU - Sadrozinski, H. F.W.

AU - Siviero, F.

AU - Sola, V.

AU - Staiano, A.

AU - Seiden, A.

AU - Tornago, M.

AU - Zhao, Y.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD) manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer. LGADs with a gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced at FBK. These sensors have been exposed to neutron fluences up to ϕn∼3⋅1016n∕cm2 and to proton fluences up to ϕp∼9⋅1015p∕cm2 to test their radiation resistance. The experimental results show that Gallium-doped LGAD are more heavily affected by the initial acceptor removal mechanism than those doped with Boron, while the addition of Carbon reduces this effect both for Gallium and Boron doping. The Boron low-diffusion gain layer shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant density.

AB - In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD) manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer. LGADs with a gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced at FBK. These sensors have been exposed to neutron fluences up to ϕn∼3⋅1016n∕cm2 and to proton fluences up to ϕp∼9⋅1015p∕cm2 to test their radiation resistance. The experimental results show that Gallium-doped LGAD are more heavily affected by the initial acceptor removal mechanism than those doped with Boron, while the addition of Carbon reduces this effect both for Gallium and Boron doping. The Boron low-diffusion gain layer shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant density.

KW - Acceptor removal

KW - LGAD

KW - Silicon

KW - Timing

UR - https://www.scopus.com/pages/publications/85058644584

U2 - 10.1016/j.nima.2018.11.121

DO - 10.1016/j.nima.2018.11.121

M3 - Article

SN - 0168-9002

VL - 919

SP - 16

EP - 26

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Radiation resistant LGAD design

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Keywords

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