First FBK production of 50 μm ultra-fast silicon detectors

V. Sola, R. Arcidiacono, M. Boscardin, N. Cartiglia, G. F. Dalla Betta, F. Ficorella, M. Ferrero, M. Mandurrino, L. Pancheri, G. Paternoster, A. Staiano

Research output: Contribution to journalArticlepeer-review

Abstract

Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 μm thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of ϕ∼ 1015 neq/cm2. In this paper, we present the characterisation, the timing performance, and the results on radiation damage tolerance of this new FBK production.

Original languageEnglish
Pages (from-to)360-368
Number of pages9
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume924
DOIs
Publication statusPublished - 21 Apr 2019

Keywords

  • Charge multiplication
  • Fast detector
  • LGAD
  • Low gain
  • Silicon

Fingerprint

Dive into the research topics of 'First FBK production of 50 μm ultra-fast silicon detectors'. Together they form a unique fingerprint.

Cite this