Development of ultra fast silicon detector for 4D tracking

F. Carnesecchi; R. Arcidiacono; N. Cartiglia; M. Ferrero; M. Mandurrino; V. Sola; A. Staiano

doi:10.1016/j.nima.2018.09.110

Development of ultra fast silicon detector for 4D tracking

F. Carnesecchi
, R. Arcidiacono
, N. Cartiglia
, M. Ferrero
, M. Mandurrino
, V. Sola
, A. Staiano

Department of Pharmaceutical Sciences

Research output: Contribution to journal › Review article › peer-review

Abstract

The Ultra Fast Silicon Detectors (UFSDs) are a new kind of silicon detectors based on Low Gain Avalanche Diodes technology. The UFSDs are optimised for time measurements with the goal of both excellent space and time resolution, which makes them a very good candidate for 4D tracking. In this paper, we will briefly explain their innovative design and show the status of the latest development. Recent measurements at the H8 beam line (CERN) will be reported, based on the UFSDs from two manufacturers: FBK and HPK. In particular, UFSDs of different thicknesses, with different doping concentrations and with different dopants of the gain layer have been studied. A time resolution of 35 ps has been achieved for a 50μm thick design and the results have been found to be in very good agreement with the expectations.

Original language	English
Pages (from-to)	608-611
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	936
DOIs	https://doi.org/10.1016/j.nima.2018.09.110
Publication status	Published - 21 Aug 2019

Keywords

4D particle tracking
LGAD
Radiation damage
Silicon detector
Timing
UFSD

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10.1016/j.nima.2018.09.110

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title = "Development of ultra fast silicon detector for 4D tracking",

abstract = "The Ultra Fast Silicon Detectors (UFSDs) are a new kind of silicon detectors based on Low Gain Avalanche Diodes technology. The UFSDs are optimised for time measurements with the goal of both excellent space and time resolution, which makes them a very good candidate for 4D tracking. In this paper, we will briefly explain their innovative design and show the status of the latest development. Recent measurements at the H8 beam line (CERN) will be reported, based on the UFSDs from two manufacturers: FBK and HPK. In particular, UFSDs of different thicknesses, with different doping concentrations and with different dopants of the gain layer have been studied. A time resolution of 35 ps has been achieved for a 50μm thick design and the results have been found to be in very good agreement with the expectations.",

keywords = "4D particle tracking, LGAD, Radiation damage, Silicon detector, Timing, UFSD",

author = "F. Carnesecchi and R. Arcidiacono and N. Cartiglia and M. Ferrero and M. Mandurrino and V. Sola and A. Staiano",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2019",

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day = "21",

doi = "10.1016/j.nima.2018.09.110",

language = "English",

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journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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TY - JOUR

T1 - Development of ultra fast silicon detector for 4D tracking

AU - Carnesecchi, F.

AU - Arcidiacono, R.

AU - Cartiglia, N.

AU - Ferrero, M.

AU - Mandurrino, M.

AU - Sola, V.

AU - Staiano, A.

PY - 2019/8/21

Y1 - 2019/8/21

N2 - The Ultra Fast Silicon Detectors (UFSDs) are a new kind of silicon detectors based on Low Gain Avalanche Diodes technology. The UFSDs are optimised for time measurements with the goal of both excellent space and time resolution, which makes them a very good candidate for 4D tracking. In this paper, we will briefly explain their innovative design and show the status of the latest development. Recent measurements at the H8 beam line (CERN) will be reported, based on the UFSDs from two manufacturers: FBK and HPK. In particular, UFSDs of different thicknesses, with different doping concentrations and with different dopants of the gain layer have been studied. A time resolution of 35 ps has been achieved for a 50μm thick design and the results have been found to be in very good agreement with the expectations.

AB - The Ultra Fast Silicon Detectors (UFSDs) are a new kind of silicon detectors based on Low Gain Avalanche Diodes technology. The UFSDs are optimised for time measurements with the goal of both excellent space and time resolution, which makes them a very good candidate for 4D tracking. In this paper, we will briefly explain their innovative design and show the status of the latest development. Recent measurements at the H8 beam line (CERN) will be reported, based on the UFSDs from two manufacturers: FBK and HPK. In particular, UFSDs of different thicknesses, with different doping concentrations and with different dopants of the gain layer have been studied. A time resolution of 35 ps has been achieved for a 50μm thick design and the results have been found to be in very good agreement with the expectations.

KW - 4D particle tracking

KW - LGAD

KW - Radiation damage

KW - Silicon detector

KW - Timing

KW - UFSD

UR - https://www.scopus.com/pages/publications/85054638625

U2 - 10.1016/j.nima.2018.09.110

DO - 10.1016/j.nima.2018.09.110

M3 - Review article

SN - 0168-9002

VL - 936

SP - 608

EP - 611

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Development of ultra fast silicon detector for 4D tracking

Abstract

Keywords

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